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| MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com * * * * * Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb-Free Packages are Available* 16 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5V Collector Current - Continuous - Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc TO-204AA (TO-3) CASE 1-07 MARKING DIAGRAM Adc W W/_C _C MJ2119xG AYWW MEX Base Current - Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 0.7 Unit _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. MJ2119x = Device Code x = 5 or 6 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device MJ21195 MJ21195G MJ21196 MJ21196G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Package TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) Shipping 100 Units / Tray 100 Units / Tray 100 Units / Tray 100 Units / Tray Preferred devices are recommended choices for future use and best overall value. 1 February, 2006 - Rev. 4 Publication Order Number: MJ21195/D MJ21195 - PNP MJ21196 - NPN ELECTRICAL CHARACTERISTICS (TC = 25C 5C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2% THD hFE unmatched hFE matched fT Cob - - 4 - 0.8 0.08 - - - - - 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) - - - - 1.4 4 - - - - 2.2 Vdc Vdc 75 - IS/b 5 2.5 - - - - Adc VCEO(sus) ICEO IEBO ICEX 250 - - - - - - - - 100 100 100 Vdc mAdc mAdc mAdc Symbol Min Typical Max Unit PNP MJ21195 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VCE = 10 V 5V 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 f T, CURRENT BANDWIDTH PRODUCT (MHz) f T, CURRENT BANDWIDTH PRODUCT (MHz) NPN MJ21196 10 V VCE = 5 V TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJ21195 - PNP MJ21196 - NPN TYPICAL CHARACTERISTICS PNP MJ21195 1000 1000 NPN MJ21196 h FE , DC CURRENT GAIN 100 TJ = 100C 25C h FE , DC CURRENT GAIN 100 TJ = 100C 25C VCE = 20 V 10 0.1 -25 C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 0.1 -25 C VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21195 1000 1000 NPN MJ21196 h FE , DC CURRENT GAIN 100 TJ = 100C 25C h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C -25 C VCE = 5 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V PNP MJ21195 30 IC , COLLECTOR CURRENT (A) 25 20 15 10 5.0 0 TJ = 25C 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 IB = 2 A 1A 0.5 A IC , COLLECTOR CURRENT (A) 1.5 A 30 25 20 Figure 6. DC Current Gain, VCE = 5 V NPN MJ21196 IB = 2 A 1.5 A 1A 0.5 A 15 10 5.0 0 TJ = 25C 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 Figure 7. Typical Output Characteristics http://onsemi.com 3 Figure 8. Typical Output Characteristics MJ21195 - PNP MJ21196 - NPN TYPICAL CHARACTERISTICS PNP MJ21195 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) VCE(sat) TJ = 25C IC/IB = 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VCE(sat) TJ = 25C IC/IB = 10 VBE(sat) NPN MJ21196 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJ21195 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN MJ21196 1.0 VCE = 5 V (DASHED) VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage 100 IC , COLLECTOR CURRENT (AMPS) 10 ms 10 1 sec 250 ms 50 ms 1.0 0.1 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1000 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJ21195 - PNP 10000 Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) MJ21196 - NPN 10000 Cib 1000 Cob TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 100 1000 TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 Cob 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21195 Typical Capacitance Figure 15. MJ21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT 8.0 W -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 MJ21195 - PNP MJ21196 - NPN PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) U V 2 TQ M Y M L G 1 -Y- H B -Q- 0.13 (0.005) M TY M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJ21195/D |
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